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 FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
May 2007
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Green Mode Fairchild Power Switch (FPSTM) for Valley Switching Converter - Low EMI and High Efficiency
Features
Optimized for Valley Switching (VSC) Low EMI through Variable Frequency Control and Inherent Frequency Modulation High-Efficiency through Minimum Voltage Switching Narrow Frequency Variation Range over Wide Load and Input Voltage Variation Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection (OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) Under-Voltage Lockout (UVLO) with Hysteresis Internal Start-up Circuit Internal High-Voltage SenseFET (650V) Built-in Soft-Start (15ms)
Description
A Valley Switching Converter generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ-series is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for valley switching operation with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout, Leading Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solutions, the FSQ-series reduces total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for costeffective designs of valley switching fly-back converters.
Applications
Power Supply for DVP Player and DVD Recorder, Set-Top Box Adapter Auxiliary Power Supply for PC, LCD TV, and PDP TV
Related Application Notes
AN-4137, AN-4141, AN-4147, AN-4150 (Flyback) AN-4134 (Forward)
FPSTM is a trademark of Fairchild Semiconductor Corporation.
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Ordering Information
Product Number(5) FSQ311 FSQ311L FSQ321 FSQ321L FSQ0165RN PKG. Operating Temp. Current Limit Maximum Output Power(1) RDS(ON) Max. 230VAC15%(2)
Adapter(3) Open-Frame(4)
85-265VAC
Adapter(3) Open-Frame(4)
Replaces Devices
8-DIP -25 to +85C 8-LSOP 8-DIP -25 to +85C 8-LSOP 8-DIP -25 to +85C 0.9A 10 10W 15W 9W 13W 0.6A 19 8W 12W 7W 10W 0.6A 19 7W 10W 6W 8W
FSDL321 FSDM311 FSDL321 FSDM311 FSDL0165RN FSDM0265RN FSDM0265RNB FSDM0365RN FSDM0365RNB
FSQ0165RL 8-LSOP FSQ0265RN 8-DIP -25 to +85C FSQ0265RL 8-LSOP FSQ0365RN 8-DIP -25 to +85C FSQ0365RL 8-LSOP 1.5A 4.5 17.5W 25W 13W 19W 1.2A 6 14W 20W 11W 16W
Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation. 3. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature. 4. Maximum practical continuous power in an open-frame design at 50C ambient. 5. PB-free package per JEDEC J-STD-020B.
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 2
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Circuit
VO
AC IN Vstr Drain PWM Sync Vfb Vcc GND
FSQ0365RN Rev.00
Figure 1. Typical Flyback Application
Internal Block Diagram
Sync 4
+ 0.7V/0.2V + VCC Idelay Vref IFB 3R R SoftStart PWM S LEB 200ns Q Gate driver 0.35/0.55 VBurst OSC + Vref VCC good 8V/12V
Vstr 5
Vcc 2
Drain 67 8
Vfb 3
RQ
AOCP
1
6V VSD Sync Vovp 6V VCC good FSQ0365RN Rev.00 TSD 2.5s time delay S Q VOCP (1.1V)
GND
RQ
Figure 2. Functional Block Diagram
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 3
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Pin Configuration
GND Vcc Vfb Sync 8-DIP 8-LSOP V
D D D Vstr
FSQ0365RN Rev.01
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
1
Name
GND
Description
SenseFET source terminal on primary side and internal control ground. Positive supply voltage input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram Section). It is not until VCC reaches the UVLO upper threshold (12V) that the internal start-up switch opens and device power is supplied via the auxiliary transformer winding. The feedback voltage pin is the non-inverting input to the PWM comparator. It has a 0.9mA current source connected internally while a capacitor and optocoupler are typically connected externally. There is a time delay while charging external capacitor Cfb from 3V to 6V using an internal 5A current source. This time delay prevents false triggering under transient conditions but still allows the protection mechanism to operate under true overload conditions. This pin is internally connected to the sync-detect comparator for valley switching. Typically the voltage of the auxiliary winding is used as Sync input voltage and external resistors and capacitor are needed to make time delay to match valley point. The threshold of the internal sync comparator is 0.7V/0.2V. This pin is connected to the rectified AC line voltage source. At start-up the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the Vcc reaches 12V, the internal switch is opened. The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 700V. Minimizing the length of the trace connecting these pins to the transformer will decrease leakage inductance.
2
Vcc
3
Vfb
4
Sync
5
Vstr
6,7,8
Drain
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 4
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C, unless otherwise specified.
Symbol
VSTR VDS VCC VFB VSync Vstr Pin Voltage Drain Pin Voltage Supply Voltage
Characteristic
Min.
500 650
Max.
Unit
V V
20 -0.3 -0.3 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 9.0 9.0 12 8 4 1.5 230 140 50 10 1.5 -40 -40 -55 Internally limited 85 150 CLASS1 C CLASS B
V V V
Feedback Voltage Range Sync Pin Voltage Range
IDM
Drain Current Pulsed(6)
A
EAS
Single Pulsed Avalanche Energy(7)
mJ
PD TJ TA TSTG ESD
Total Power Dissipation Recommended Operating Junction Temperature Operating Ambient Temperature Storage Temperature Human Body Model(8) Machine Model(8)
W C C C
Notes: 6. Repetitive rating: Pulse width limited by maximum junction temperature. 7. L=51mH, starting TJ=25C. 8. Meets JEDEC standards JESD22-A114 and JESD22-A115.
Thermal Impedance(9)
Symbol
8-DIP JA(10) JC(11) JT(12) Junction-to-Ambient Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Top Thermal Resistance 80 20 35 C/W
Parameter
Value
Unit
Notes: 9. All items are tested with the standards JESD 51-2 and 51-10 (DIP). 10. Free-standing, with no heat-sink, under natural convection. 11. Infinite cooling condition - refer to the SEMI G30-88. 12. Measured on the package top surface.
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 5
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Electrical Characteristics
TA = 25C unless otherwise specified.
Symbol
SenseFET Section BVDSS IDSS
Parameter
Drain Source Breakdown Voltage Zero-Gate-Voltage Drain Current FSQ0365 Drain-Source On-State Resistance(13) FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 Reverse Transfer Capacitance FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311 FSQ0365 FSQ0265 FSQ0165 FSQ321/311
Condition
VCC = 0V, ID = 100A VDS = 560V
Min. Typ. Max. Unit
650 100 3.5 4.5 6.0 10.0 19.0 5.0 8.0 14.0 315 550 250 162 47 38 25 18 9.0 17.0 10.0 3.8 11.2 20.0 12.0 9.5 34 15 4 19 28.2 55.0 30.0 33.0 32 25 10 42 V A
RDS(ON)
TJ = 25C, ID = 0.5A
CSS
Input Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
pF
COSS
Output Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
pF
CRSS
VGS = 0V, VDS = 25V, f = 1MHz
pF
td(on)
Turn-On Delay Time
VDD = 350V, ID = 25mA
ns
tr
Rise Time
VDD = 350V, ID = 25mA
ns
td(off)
Turn-Off Delay Time
VDD = 350V, ID = 25mA
ns
tf
Fall Time
VDD = 350V, ID = 25mA
ns
Control Section tON.MAX1 tON.MAX2 tB1 tB2 Maximum On Time1 Maximum On Time2 Blanking Time1 Blanking Time2 All but Q321 Q321 All but Q321 Q321 TJ = 25C TJ = 25C 10.5 6.35 13.2 7.5 12.0 7.06 15.0 8.2 13.5 7.77 16.8 s s s s
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 6
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Electrical Characteristics (Continued)
TA = 25C unless otherwise specified.
Symbol
tW fS1 fS2 fS IFB DMIN VSTART VSTOP tS/S1 tS/S2 VBURH VBURL VBUR(HYS) Protection Section
Parameter
Detection Time Window Initial Switching Freq.1 Initial Switching Freq.2 Feedback Source Current Minimum Duty Cycle UVLO Threshold Voltage Internal Soft-Start Time1 Internal Soft-Start Time2 All but Q321 Q321 All but Q321 Q321
Condition
TJ = 25C, Vsync = 0V
Min. Typ. Max. Unit
3.0 50.5 84.0 55.6 89.3 5 700 11 7 900 12 8 15 10 0.45 0.55 0.35 200 0.65 0.45 61.7 95.2 10 1100 0 13 9 s kHz kHz % A % V V ms ms V V mV 1.68 1.34 1.0 0.67 0.67 6.5 6 6.5 4 155 0.85 0.26 V A ns V s C V V ns 5 450 1.00 mA A mA V A
Switching Frequency Variation(14)
-25C < TJ < 85C VFB = 0V VFB = 0V After turn-on With free-running frequency With free-running frequency
Burst Mode Section Burst-Mode Voltage TJ = 25C, tPD = 200ns(15) 0.25
FSQ0365 FSQ0265 ILIM Peak Current Limit FSQ0165 FSQ321 FSQ311 VSD IDELAY tLEB VOVP tOVP TSD VSH VSL tSync IOP ISTART ICH VSTR Shutdown Feedback Voltage Shutdown Delay Current Leading-Edge Blanking Time(14) Over-Voltage Protection Over-Voltage Protection Blanking Time Thermal Shutdown Temperature(14)
TJ = 25C, di/dt = 240mA/s TJ = 25C, di/dt = 200mA/s TJ = 25C, di/dt = 175mA/s TJ = 25C, di/dt = 125mA/s TJ = 25C, di/dt = 112mA/s VCC = 15V VFB = 5V VCC = 15V, VFB = 2V
1.32 1.06 0.8 0.53 0.53 5.5 4 5.5 2 125 0.55 0.14
1.50 1.20 0.9 0.60 0.60 6.0 5 200 6.0 3 140 0.70 0.20 300
Sync Section Sync Threshold Voltage Sync Delay Time(14)(16) VCC = 15V VCC = VSTART - 0.1V (before VCC reaches VSTART) VCC = 0V, VSTR = min. 40V 1 270 0.65
Total Device Section Oper. Supply Current (Control Part Only) Start Current Start-up Charging Current Minimum VSTR Supply Voltage 3 360 0.85 26
Notes: 13. Pulse test: Pulse-Width=300s, duty=2% 14. Though guaranteed, it is not 100% tested in production. 15. Propagation delay in the control IC. 16. Includes gate turn-on time.
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 7
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Comparison Between FSDM0x65RNB and FSQ-Series
Function
Operation method
FSDM0x65RNB
Constant frequency PWM Frequency modulation
FSQ-Series
Valley switching operation Valley switching & inherent frequency modulation
FSQ-Series Advantages
Improved efficiency by valley switching Reduced EMI noise Reduce EMI noise by two ways Improved standby power by valley switching also in burst-mode Because the current peak during burst operation is dependent on VFB, it is easier to solve audible noise Improved reliability through precise abnormal over-current protection
EMI reduction
Burst-mode operation Fixed burst peak
Advanced burst-mode
Protection
AOCP
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 8
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Performance Characteristics
These characteristic graphs are normalized at TA= 25C.
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 4. Operating Supply Current (IOP) vs. TA
Figure 5. UVLO Start Threshold Voltage (VSTART) vs. TA
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 6. UVLO Stop Threshold Voltage (VSTOP) vs. TA
Figure 7. Start-up Charging Current (ICH) vs. TA
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 8. Initial Switching Frequency (fS) vs. TA
Figure 9. Maximum On Time (tON.MAX) vs. TA
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 9
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25C.
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 10. Blanking Time (tB) vs. TA
Figure 11. Feedback Source Current (IFB) vs. TA
1.2 1.0
1.2 1.0
Normalized
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 12. Shutdown Delay Current (IDELAY) vs. TA
Figure 13. Burst-Mode High Threshold Voltage (Vburh) vs. TA
1.2 1.0
1.2 1.0
Normalized
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 14. Burst-Mode Low Threshold Voltage (Vburl) vs. TA
Figure 15. Peak Current Limit (ILIM) vs. TA
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 10
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25C.
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 16. Sync High Threshold Voltage (VSH) vs. TA
Figure 17. Sync Low Threshold Voltage (VSL) vs. TA
1.2 1.0
1.2 1.0
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Normalized
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
Temperature [C]
Temperature [C]
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA
Figure 19. Over-Voltage Protection (VOP) vs. TA
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 11
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Functional Description
1. Startup: At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (Ca) connected to the Vcc pin, as illustrated in Figure 20. When VCC reaches 12V, the FPS begins switching and the internal high-voltage current source is disabled. The FPS continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of 8V.
2.2 Leading Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FPS employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (tLEB) after the SenseFET is turned on.
VCC Idelay Vref IFB
OSC
VDC
VO
FOD817A
VFB
CB
3 D1 D2 3R + VFB* R
SenseFET
Ca
KA431
Gate driver
-
VCC 2 ICH Vref 8V/12V VCC good Internal Bias 5
Vstr
VSD
FSQ0365RN Rev. 00
OLP
Rsense
Figure 21. Pulse-Width-Modulation (PWM) Circuit 3. Synchronization: The FSQ-series employs a valley switching technique to minimize the switching noise and loss. The basic waveforms of the valley switching converter are shown in Figure 22. To minimize the MOSFET's switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 22. The minimum drain voltage is indirectly detected by monitoring the VCC winding voltage, as shown in Figure 22.
Vds
FSQ0365RN Rev.00
Figure 20. Start-up Circuit 2. Feedback Control: FPS employs current mode control, as shown in Figure 21. An opto-coupler (such as the FOD817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, thus pulling down the feedback voltage and reducing the duty cycle. This event typically happens when the input voltage is increased or the output load is decreased.
VRO VRO
VDC
Vsync
tF Vovp (6V)
2.1 Pulse-by-Pulse Current Limit: Because current mode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 21. Assuming that the 0.9mA current source flows only through the internal resistor (3R + R = 2.8k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping VFB*. Therefore, the peak value of the current through the SenseFET is limited.
0.7V 0.2V 300ns Delay MOSFET Gate
ON
ON
FSQ0365RN Rev.00
Figure 22. Valley Resonant Switching Waveforms
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 12
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FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
4. Protection Circuits: The FSQ-series has several self-protective functions, such as Overload Protection (OLP), Abnormal Over-Current protection (AOCP), OverVoltage Protection (OVP), and Thermal Shutdown (TSD). All the protections are implemented as autorestart mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VCC falls down to the Under-Voltage Lockout (UVLO) stop voltage of 8V, the protection is reset and start-up circuit charges VCC capacitor. When the VCC reaches the start voltage of 12V, the FSQ-series resumes normal operation. If the fault condition is not removed, the SenseFET remains off and VCC drops to stop voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, the reliability is improved without increasing cost.
voltage. If the output consumes more than this maximum power, the output voltage (VO) decreases below the set voltage. This reduces the current through the optocoupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (VFB). If VFB exceeds 2.8V, D1 is blocked and the 5A current source starts to charge CB slowly up to VCC. In this condition, VFB continues increasing until it reaches 6V, when the switching operation is terminated, as shown in Figure 24. The delay time for shutdown is the time required to charge CB from 2.8V to 6V with 5A. A 20 ~ 50ms delay time is typical for most applications.
VFB
6.0V
FSQ0365RN Rev.00
Overload protection
2.8V
Fault occurs Fault removed
VDS
Power on
t12= CFB*(6.0-2.8)/Idelay t1 t2
t
Figure 24. Overload Protection
VCC
12V 8V
t
Normal operation Fault situation Normal operation
FSQ0365RN Rev. 00
Figure 23. Auto Restart Protection Waveforms
AOCP FSQ0365RN Rev.00 VOCP
Figure 25. Abnormal Over-Current Protection
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 13 www.fairchildsemi.com
+
4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the Sense FET is limited, and therefore the maximum input power is restricted with a given input
4.2 Abnormal Over-Current Protection (AOCP): When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high-di/dt can flow through the SenseFET during the LEB time. Even though the FSQ-series has OLP (Overload Protection), it is not enough to protect the FSQ-series in that abnormal case, since severe current stress is imposed on the SenseFET until OLP triggers. The FSQ-series has an internal AOCP (Abnormal Over-Current Protection) circuit as shown in Figure 25. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS.
3R
OSC PWM LEB 200ns
S Q
R
Q
Gate driver
R
Rsense 1 GND
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
4.3 Over-Voltage Protection (OVP): If the secondary side feedback circuit malfunctions or a solder defect causes an opening in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then, VFB climbs up in a similar manner to the overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection triggers. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection triggers, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an OVP circuit is employed. In general, the peak voltage of the sync signal is proportional to the output voltage and the FSQ-series uses a sync signal instead of directly monitoring the output voltage. If the sync signal exceeds 6V, an OVP is triggered, shutting down the SMPS. To avoid undesired triggering of OVP during normal operation, the peak voltage of the sync signal should be designed below 6V.
VO
VOset
VFB
0.55V 0.35V
IDS
VDS
4.4 Thermal Shutdown (TSD): The SenseFET and the control IC are built in one package. This makes it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds ~150C, the thermal shutdown triggers.
time
Switching disabled FSQ0365RN Rev.00
t1
t2 t3
Switching disabled
t4
Figure 26. Waveforms of Burst Operation
5. Soft-Start: The FPS has an internal soft-start circuit that increases PWM comparator inverting input voltage with the SenseFET current slowly after it starts up. The typical soft-start time is 15ms, The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This mode helps prevent transformer saturation and reduces stress on the secondary diode during startup.
7. Switching Frequency Limit: To minimize switching loss and EMI (Electromagnetic Interference), the MOSFET turns on when the drain voltage reaches its minimum value in valley switching operation. However, this causes switching frequency to increases at light load conditions. As the load decreases, the peak drain current diminishes and the switching frequency increases. This results in severe switching losses at light-load condition, as well as intermittent switching and audible noise. Because of these problems, the valley switching converter topology has limitations in a wide range of applications.
6. Burst Operation: To minimize power dissipation in standby mode, the FPS enters burst-mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 26, the device automatically enters burst-mode when the feedback voltage drops below VBURL (350mV). At this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes VBURH (550mV), switching resumes. The feedback voltage then falls and the process repeats. Burst-mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in standby mode.
To overcome this problem, FSQ-series employs a frequency-limit function, as shown in Figures 27 and 28. Once the SenseFET is turned on, the next turn-on is prohibited during the blanking time (tB). After the blanking time, the controller finds the valley within the detection time window (tW) and turns on the MOSFET, as shown in Figures 27 and 28 (Cases A, B, and C). If no valley is found during tW, the internal SenseFET is forced to turn on at the end of tW (Case D). Therefore, our devices have a minimum switching frequency of 55kHz and a maximum switching frequency of 67kHz, as shown in Figure 28.
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 14
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
tsmax=18s IDS IDS
When the resonant period is 2s 67kHz A B 59kHz 55kHz C
Constant frequency
A
tB=15s ts
D
Burst mode
IDS
IDS
B
tB=15s ts
PO
FSQ0365RN Rev. 00
Figure 28. Switching Frequency Range
IDS
IDS
C
tB=15s ts
IDS
IDS
tB=15s
D
tW=3s
tsmax=18s
FSQ0365RN Rev. 00
Figure 27. Valley Switching with Limited Frequency
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 15
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Application Circuit of FSQ0365RN
Application
DVD Player Power Supply
FPS Device
Input Voltage Range
85-265VAC
Rated Output Power
Output Voltage (Max. Current)
5.1V (1.0A) 3.4V (1.0A) 12V (0.4A) 16V (0.3A)
FSQ0365RN
19W
Features
High efficiency ( >77% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms)
Key Design Notes
The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity.
1. Schematic
C209 47pF T101 EER2828 RT101 5D-9 R105 100k C103 33F 400V 2 IC101 FSQ0365RN 1 BD101 Bridge Diode 3 5 4 Sync 4 C102 100nF,275VAC 3 C105 47nF 50V FB GND 1 Vstr 8 Drain 7 Drain 6 Drain Vcc R102 56k C104 10nF 630V R108 62 1 11 D201 UF4003 C210 47pF C201 470F 35V L202 3 12V, 0.4A 10 D202 UF4003 12 C203 470F 35V C204 470F 35V L201 16V, 0.3A C202 470F 35V
2 D101 1N 4007
C106 C107 100nF 22F 2 SMD 50V
L203 R103 5 4 5 9 6 D203 SB360 C205 1000F 10V L204 3.4V, 1A D204 SB360 C207 1000F 10V C208 1000F 10V C206 1000F 10V 5.1V, 1A
D102 1N 4004 R104 12k ZD101 1N4746A
C110 33pF 50V
R106 R107 6.2k 6.2k
D103 1N4148
LF101 40mH
8 C302 3.3nF R201 510 R203 6.2k R202 1k R204 20k C209 100nF
C101 100nF 275VAC
TNR 10D471K
F101 FUSE
IC202 FOD817A IC201 KA431 R205 6k FSQ0365RN Rev:00
AC IN
Figure 29. Demo Circuit of FSQ0365RN
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 16
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
2. Transformer
EER2828 Np/2 1 11 N16V 10 N12V 9N 3.4V 8
6mm
12 Np/2 N16V N12V Na N5.1V
3mm
Np/2 2 3 Na 4 5
7 6N 5.1V
N3.4V Np/2
FSQ0365RN Rev: 00
Figure 30. Transformer Schematic Diagram of FSQ0365RN
3. Winding Specification No
Np/2 N3.4V N5V Na N12V N16V Np/2
Pin (sf)
32 98 69 45 10 12 11 12 21
Wire
0.25
x1
Turns
50 4 2 16 14 18 50
Winding Method
Center Solenoid Winding Center Solenoid Winding Center Solenoid Winding Center Solenoid Winding Center Solenoid Winding Center Solenoid Winding Center Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2 Layers 0.33 x 2 0.33 x 1 0.25 x 1 0.33 x 3 0.33 x 3 0.25 x 1 Insulation: Polyester Tape t = 0.050mm, 2 Layers Insulation: Polyester Tape t = 0.050mm, 2 Layers Insulation: Polyester Tape t = 0.050mm, 2 Layers Insulation: Polyester Tape t = 0.050mm, 3 Layers Insulation: Polyester Tape t = 0.050mm, 2 Layers Insulation: Polyester Tape t = 0.050mm, 2 Layers
4. Electrical Characteristics Pin
Inductance Leakage 1-3 1-3
Specification
1.4mH 10% 25H Max.
Remarks
100kHz, 1V Short all other pins
5. Core & Bobbin
Core: EER2828 (Ae=86.66mm2) Bobbin: EER2828
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 17
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
6. Demo Board Part List Part
R102 R103 R104 R105 R106 R107 R108 R201 R202 R203 R204 R205 C101 C102 C103 C104 C105 C106 C107 C110 C201 C202 C203 C204 C205 C206 C207 C208 C209
Value
Resistor
Note
1W 1/2W 1/4W 1/4W 1/4W 1/4W 1W 1/4W 1/4W 1/4W 1/4W 1/4W
Part
L201 L202 L203 L204 D101 D102 ZD101 D103 D201 D202 D203 D204
Value
Inductor
Note
56k 5 12k 100k 6.2k 6.2k 62 510 1k 6.2k 20k 6k
Capacitor
10H 10H 4.9H 4.9H
Diode
IN4007 IN4004 1N4746A 1N4148 UF4003 UF4003 SB360 SB360
IC
100nF/275VAC 100nF/275VAC 33F/400V 10nF/630V 47nF/50V 100nF/50V 22F/50V 33pF/50V 470F/35V 470F/35V 470F/35V 470F/35V 1000F/10V 1000F/10V 1000F/10V 1000F/10V 100nF /50V
Box Capacitor Box Capacitor Electrolytic Capacitor Film Capacitor Mono Capacitor SMD (1206) Electrolytic Capacitor Ceramic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Ceramic Capacitor TNR 10D471K T101
Varistor
IC101 IC201 IC202 Fuse RT101 BD101 LF101
FSQ0365RN KA431 (TL431) FOD817A
Fuse
FPSTM Voltage reference Opto-coupler
2A/250V
NTC
5D-9
Bridge Diode
2KBP06M2N257
Line Filter
Bridge Diode
40mH
Transformer
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 18
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Typical Application Circuit of FSQ311
Application
DVD Player Power Supply
FPS Device
Input Voltage Range
85-265VAC
Rated Output Power
Output Voltage (Max. Current)
5.1V (0.9A) 3.3V (0.9A) 12V (0.03A) 16V (0.03A)
FSQ311
8W
Features
High efficiency ( >70% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms)
Key Design Notes
The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity.
1. Schematic
C1 4.7nF
L2 660H D3 1N4007 D2 1N4007 RT1 5D-9 R2 100k C6 10F 400V D6 1N4007 D5 1N4007 C7 10F 400V RS5 150k CS5 6.8nF 680V RS6 200 U1 FSQ311 5 4 Sync 3 C17 47nF 50V Vfb Vstr 8 Drain 7 Drain 6 Drain Vcc 2 GND 1 ZR1 1.2k DS1 1N 4007 1
T1 EE1927 12 D1 UF4003 C3 100F 35V
L1 -12V, 0.03A C2 100F 35V L3
F1 FUSE
2
11 12V, 0.03A
AC IN
3
10
D4 UF4003
C4 100F 35V
C5 100F 35V
FB1 Ferritebead
11
C104* C14 100nF 22F SMD 50V D8 1N 4004
R4* 5 5 R5 12k
7 D7 SB360
L5 5.1V, 0.9A C12 680F 10V L6 C11 680F 10V
8 6 9 3.3V, 0.9A D9 SB360 D10 1N4148 C15 680F 10V C16 680F 10V
ZD1 1N4746A C18 33pF 50V R11 R7 6.2k 6.2k
8
R6 510 R10 6.2k
* : optional components
U3 FOD817A U2 TL431
R8 1k
R12 8k
C19 68nF
R13 6k
Figure 31. Demo Circuit of FSQ311
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 19
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
2. Transformer
3mm 3mm
EE1927 12
Np/2 Np/2
1
N-12V
TAPE 4T Lp/2(0.2)
(0.1~0.15)
1 2
6 5 1 1
2 3
11 10 N 12V 9 N3.3V
TAPE 2T TAPE 2T TAPE 2T TAPE 1T TAPE 1T TAPE 1T
1 1
NVcc
Shield winding
(0.1~0.15)
N12V & N-12V
(0.1~0.15) (0.2,3parallel) (0.2,3parallel)
12
11
11
10
N3.3V N5V
8 8
8 8
8 8
9 7
9 7
9 7
NVCC 5 6
8 7
Shield winding
TAPE 1T TAPE 2T TAPE 1T
(0.1~0.15)
N5V
Lp/2(0.2)
2 3
Bottom of bobbin
Figure 32. Transformer Schematic Diagram of FSQ311
3. Winding Specification No Pin (sf)
Wire
Turns
111
Winding Method
Solenoid Winding, 2 Layers Shield winding
Np/2 32 0.2 x 1 Insulation: Polyester Tape t = 0.025mm, 2 Layers Shield 1 open 0.1 x 2 Insulation: Polyester Tape t = 0.025mm, 1 Layer N5V 78 0.2 x 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer N3.3V 98 0.2 x 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer N12V 10 11 0.1 x 1 N-12V 11 12 0.1 x 3 Insulation: Polyester Tape t = 0.025mm, 1 Layer Shield 1 open 0.1 x 2 Insulation: Polyester Tape t = 0.025mm, 2 Layers NVCCV 56 0.1 x 1 Insulation: Polyester Tape t = 0.025mm, 2 Layers Np/2 21 0.2 x 1 Insulation: Polyester Tape t = 0.025mm, 4 Layers
15 10 30 33
Center Solenoid Winding Center Solenoid Winding Solenoid Winding Solenoid Winding Shield winding
36 111
Center Solenoid Winding Solenoid Winding, 2 Layers
4. Electrical Characteristics Pin
Inductance Leakage 1-3 1-3
Specification
2.1mH 10% 100H Max.
Remarks
66kHz, 1V Short all other pins
5. Core & Bobbin
Core: EE1927 (Ae=23.4mm2) Bobbin: EE1927
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 20
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
6. Demo Board Part List
Part
R2 ZR1 R4 R5 R7 R11 RS5 RS6 R6 R8 R12 R10 R13 C6 C7 C17 C104 C14 C18 CS5 C2 C3 C4 C5 C11 C12 C15 C16 C19 C1
Value
Resistor
Note
1/4W 1/4W 1/2W 1/4W 1/4W 1/4W 2W 1W 1/4W 1/4W 1/4W 1/4W, 1% 1/4W, 1%
Part
L2 L1 L3 L5 L6 D2,3,4,5 D8 D10 ZD1 DS1 D1 D4 D7 D9 U1 U2 U3 Fuse RT1 T1 FB1
Value
Inductor
Note
100k 1.2k 5 12k 6.2k 6.2k 150k 200 510 1k 8k 6.2k 6k
Capacitor
660H 4.7H 4.7H 4.7H 4.7H
Diode
IN4007 IN4004 1N4148 1N4746A 1N4007 UF4003 UF4003 SB360 SB360
IC
10F/400V 10F/400V 47nF/50V 100nF/50V 22F/50V 33pF/50V 6.8nF/680V 100F/35V 100F/35V 100F/35V 100F/35V 680F/10V 680F/10V 680F/10V 680F/10V 68nF/50V 4.7nF/375VAC
Electrolytic Electrolytic Ceramic SMD(1206) Electrolytic Ceramic Film Electrolytic Electrolytic Electrolytic Electrolytic Electrolytic Electrolytic Electrolytic Electrolytic Ceramic Ceramic
FSQ311 KA431 (TL431) FOD817A
Fuse
FPSTM Voltage reference Opto-coupler
2A/250V
NTC
5D-9
Transformer
EE1927
Ferrite bead
Bridge Diode
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 21
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Package Dimensions
8-DIP
Dimensions are in millimeters unless otherwise noted.
Figure 33. 8-Lead, Dual In-Line Package
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 22
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
Package Dimensions (Continued)
8-LSOP
Dimensions are in millimeters unless otherwise noted.
MKT-MLSOP08ArevA
Figure 34. 8-Lead, LSOP Package
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 23
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 -- Green Mode Fairchild Power Switch (FPSTM)
(c) 2006 Fairchild Semiconductor Corporation FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 24
www.fairchildsemi.com


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